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| r07ds0604ej0100 rev.1.00 page 1 of 15 jan 19, 2012 preliminary data sheet ? pd166105gs mos integrated circuit description the ? pd166105 is a high-voltage, dual output, and n-cha nnel low-side intelligent power device with built-in overtemperature-protection, overcurrent-limita tion, and disconnection-detection circuits. it protects itself by shutting down or limiting curren t when it detects overtemperature or overcurrent. output mos shut down is restarted automatically by cooling of the chip temperature. when load is normal, a diagnostic output is produced on detection of a flyback voltage. when load is disconnected, diagnostic output stops. features ? high voltage dual output low side driver ? built-in overcurrent limitation circuits and overtemperature protection circuits ? shuts down by overtemperature detection ? restarts automatically after cooling ? built-in dynamic clamping circuit (100 v min.) ? built-in disconnection-detection circuit ? a diagnostic output is produced on detection of a flyback voltage. ? diagnostic output stops on disconnection. ? low on-state resistance ? high temperature opera tion (tch = 175c max.) ? small 20-pin sop package application ? injector driver ordering information part no. lead plating packing package ? pd166105gs-e1-ay sn tape 2500 p/reel 20-pin plastic sop (7.62 mm (300)) ? pd166105gs-e2-ay sn tape 2500 p/reel 20-pin plastic sop (7.62 mm (300)) r07ds0604ej0100 rev.1.00 jan 19, 2012
? pd166105gs r07ds0604ej0100 rev.1.00 page 2 of 15 jan 19, 2012 block diagram v cc 1 in1 dynamic clamping circuit output mos (n-ch) ch1 gnd2 out2 out1 out1 in2 v cc 2 overtemperature protection current limitation disconnection detection diag1 diag2 ch2 input circuit pin configuration ? 20-pin plastic sop (7.62 mm (300)) v cc 1 in1 out1 diag1 out1 out2 v cc 2 diag2 out2 in2 out1 out1 out2 out2 gnd1 gnd1 gnd1 gnd2 gnd2 gnd2 20 19 18 17 16 15 14 13 12 11 1 2 3 4 5 6 7 8 9 10 (top view) pin name pin no. pin name pin no. pin name pin no. pin name pin no. pin name 1 out1 6 out2 11 out2 16 out1 2 in1 7 in2 12 gnd2 17 gnd1 3 diag1 8 diag2 13 gnd2 18 gnd1 4 v cc 1 9 v cc 2 14 gnd2 19 gnd1 5 out1 10 out2 15 out2 20 out1 ? pd166105gs r07ds0604ej0100 rev.1.00 page 3 of 15 jan 19, 2012 absolute maximum ratings (ta = 25c, unless otherwise specified) item symbol rating unit condition input voltage v in ?1.5 to +7.0 v v cc 1 ?0.5 to +18 v dc v cc 2 24 v 60 s power supply voltage v cc 3 35 v 1 s output voltage v out 100 v except the clamping voltage at the flyback time output current i o(dc) self limited a/ch v in = 5 v, dc diag output voltage v diag 7 v diag output current i diag 20 ma power dissipation p d 2.4 w ta = 25c, both channels are on note channel temperature tch ?40 to +175 c storage temperature tstg ?55 to +175 c note: when mounted on 50 mm ? 50 mm ? 1.6 mm epoxy pcb fr4 substrate with 600 mm 2 ? 70 ? m copper foil. caution: product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameters. that is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditio ns that ensure t hat the absolute maximum ratings are not exceeded. the ratings and conditions indicated for dc characte ristics and ac characteristics represent the quality assurance range during normal operation. ? pd166105gs r07ds0604ej0100 rev.1.00 page 4 of 15 jan 19, 2012 electrical characteristics (v cc = 5 to 18 v, tch = ?40 to +175c, unless otherwise specified) item symbol min. typ. max. unit condition high level input voltage v ih 3.0 ? ? v rin = 1 k ? , v ds = 0.3 v, i o = 1.4 a low level input voltage v il ? ? 1.5 v rin = 1 k ? , v ds = 20 v, i o = 1 ma high level input current i ih ? ? 300 ? a v in = 5.5 v, v ds = 0 v low level input current i il ?10 ? +10 ? a v in = 0 v, v ds = 20 v i cc 1 ? ? 10 ma/ch v in = 16 v, on condition power supply current i cc 2 ? ? 10 ma/ch v in = 16 v, off condition r ds(on) 1 ? 64 91 m ? i o = 1.4 a, tch = 25c, v in = v ih , v cc = 16 v output on-state resistance r ds(on) 2 ? 117 207 m ? i o = 1.4 a, tch = 175c, v in = v ih , v cc = 16 v turn on time t on 3.5 ? 35 ? s rise time t r ? ? 35 ? s v in = 0 ? 5 v, rin = 1 k ? , r l = 8 ? , v cc = 12 v, tch = 0 to 175c turn off time t off ? ? 30 ? s fall time t f ? ? 15 ? s v in = 5 ? 0 v, rin = 1 k ? , r l = 8 ? , v cc = 12 v, tch = 0 to 175c output leakage current i dss ? ? 350 ? a v in = 0 v, v ds = 18 v clamp voltage v out 100 ? 130 v i o = 10 ma, tch = 25c, v in = 0 v temperature characteristics of clamp voltage ? v z ? 130 ? mv/c i o = 1.4 a, v in = v il , l = 1 mh overtemperature detection temperature t hi 175 ? ? c v in = 5 v, v cc = 6 to 18 v current limitation i lim 1.7 ? ? a flyback detection voltage v fb 33 ? 83 v diag response time t diag 0 ? 5 ? s i o = 1.4 a, l = 1 mh, v diag = 5 v, r diag = 51 k ? r diag(on) 1 ? ? 0.83 k ? v cc = 16 v, i odiag = 2.4 ma diag on-state resistance r diag(on) 2 ? ? 1.54 k ? v cc = 6 v, i odiag = 1.3 ma ? 1.4 3.0 ? a v diag = 5 v, tch = 25c diag output leakage current i diagleak ? 40 60 ? a v diag = 5 v, tch = 175c ? pd166105gs r07ds0604ej0100 rev.1.00 page 5 of 15 jan 19, 2012 switching measurement waveform in waveform 10% t on t r t off t f 50% 50% 90% 90% 10% out waveform diag output measurement waveform t r t f v fb t diag t on t off 50% 50% 90% 10% 10% 90% 10% t diag in waveform out waveform diag waveform switching measurement circuit diag output measurement circuit out v cc in gnd 12 v rin: 1 k r l : 8 v in diag v o l: 1 mh 5 v r diag : 51 k v odiag out v cc in gnd 12 v rin: 1 k v in diag v o ? pd166105gs r07ds0604ej0100 rev.1.00 page 6 of 15 jan 19, 2012 outline of functions input circuit (on/off control) output mos turns on when the high-level input voltage (3.0 v or more) is applied to in terminal. output mos turns off when the low-level input voltage (1.5 v or less) is applied to in terminal. gnd 5 v v in v out ( resistance load ) v out gnd "l" "h" "h" "h" on on "l" "l" "l" off off off off on dynamic clamp circuit this circuit is for protection of output and other circuits from the overvoltage by back electromotive force when inductive load turns off. the clamp diod e is connected between drain and gate of output. output voltage is clamped by this circuit when the voltage of the out terminal exceeded the output clamping voltage. v z v in v out ( inductive load ) 5 v gnd gnd v out "h" on "l" "l" off off current limitation circuit this circuit prevents destruction from the overcurrent when the short-circuit occurs. when the overcurrent flows to the out terminal such as short-circuit condition, the output current is limited. power supply voltage to out terminal should be 18 v or less when the short-circuit occurs. overtemperature protection circuit this circuit prevents destruction from overtemperature. the channel temperature of the output is monitored and the output is shut down when overtemperatur e is detected. output restarts automatically after the channel cooled down. 5 v v in gnd v cc "h" "l" "l" off off off on on tch v out gnd t hi ? pd166105gs r07ds0604ej0100 rev.1.00 page 7 of 15 jan 19, 2012 disconnection detection circuit the signal on the diag pins goes to the low level in synchronization with the generation of flyback voltage when an inductive load is being driven. the high level is output on the diag pin when the inductive load is disconnected. disconnection 5 v 5 v v in v diag gnd gnd gnd v out (inductive load) v out "l" "l" "l" "h" "h" "h" off off off on on ? pd166105gs r07ds0604ej0100 rev.1.00 page 8 of 15 jan 19, 2012 typical characteristics 50 100 150 200 250 v il - low level input voltage - v 1.0 1.5 2.0 2.5 3.5 3.0 v ih - high level input voltage - v 1.0 1.5 2.0 2.5 3.5 3.0 v ih - high level input voltage - v 1.0 1.5 2.0 2.5 3.5 3.0 v il - low level input voltage - v 1.0 1.5 2.0 2.5 3.5 3.0 0 5 10 15 20 v cc - supply voltage - v ?50 0 50 100 150 200 ta - ambient temperature - c low level input voltage vs. supply voltage high level input voltage vs. supply voltage low level input voltage vs. ambient temperature high level input voltage vs. ambient temperature ?50 0 50 100 150 200 ta - ambient temperature - c 0 300 i ih - high level input current - a 50 100 150 200 250 0 300 i ih - high level input current - a high level input current vs. ambient temperature ?50 0 50 100 150 200 ta - ambient temperature - c high level input current vs. supply voltage 0 5 10 15 20 v cc - supply voltage - v 0 5 10 15 20 v cc - supply voltage - v ? pd166105gs r07ds0604ej0100 rev.1.00 page 9 of 15 jan 19, 2012 0 0 5 10 15 20 25 0 5 10 15 20 25 5 10 15 20 25 5 10 15 20 25 t on - turn on time - si cc - operating current - ma t r - rise time - s t f - fall time - st off - turn off time - s 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 50 100 150 200 250 300 operating current vs. ambient temperature rise time vs. ambient temperature fall time vs. ambient temperature turn on time vs. ambient temperature turn off time vs. ambient temperature 0 ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c i cc1 i cc2 i dss - output leakage current - a output leakage current vs. ambient temperature ? pd166105gs r07ds0604ej0100 rev.1.00 page 10 of 15 jan 19, 2012 p t - total power dissipation - w 0 0.5 1.0 1.5 2.0 2.5 3.0 ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c v cc = 6 v v cc = 16 v total power dissipation vs. ambient temperature 0 10 20 30 40 50 60 ?50 0 50 100 150 200 ta - ambient temperature - c i diagleak - diag leakage current - a diag leakage current vs. ambient temperature 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 r ds(on) - on-state resistance - r diag(on) - diag on-state resistance - k on-state resistance vs. ambient temperature 30 40 50 60 70 80 90 v fb - flyback detection voltage - v flyback detection voltage vs. ambient temperature diag on-state resistance vs. ambient temperature 0 0.2 0.4 0.6 0.8 1.0 ?50 0 50 100 150 200 ta - ambient temperature - c ?50 0 50 100 150 200 ta - ambient temperature - c 2 units 1 unit ? pd166105gs r07ds0604ej0100 rev.1.00 page 11 of 15 jan 19, 2012 transient thermal resistance characteristics 0.1 1 10 100 1000 1 m 10 m 100 m 1 10 100 1000 pw - pulse width - s rth(t) - transient thermal resistance - c/w device on 50 mm 50 mm 1.6 mm epoxy pcb fr4 with 600 mm 2 of 70 m copper area rth(ch-a) = 62.5c/w rth(ch-c) = 16.5c/w transient thermal resistance vs. pulse width application example 1 vbat v cc 1 in1 out1 diag1 out2 v cc 2 diag2 in2 gnd2 gnd1 pd166105 rin micro computer caution: this application circuit is example and not intended for use in actual mass production design. 5 v rin: ex. 470 r1: ex. 1 k q1: ex. part no. gn4n2m(0)-t1-at r1 q1 rin rin rin injector injector v cc 1 in1 out1 diag1 out2 v cc 2 diag2 in2 gnd2 gnd1 pd166105 power gnd power gnd gnd injector injector ? pd166105gs r07ds0604ej0100 rev.1.00 page 12 of 15 jan 19, 2012 application example 2 vbat v cc 1 in1 out1 diag1 out2 v cc 2 diag2 in2 gnd2 gnd1 pd166105 rin micro computer caution: this application circuit is example and not intended for use in actual mass production design. 5 v rin: ex. 470 r2 rin rin rin injector injector v cc 1 in1 out1 diag1 out2 v cc 2 diag2 in2 gnd2 gnd1 pd166105 power gnd power gnd gnd injector injector r1 ? pd166105gs r07ds0604ej0100 rev.1.00 page 13 of 15 jan 19, 2012 package drawing 20-pin plastic sop (7.62 mm (300)) 0.10 s 3 detail of lead end 0.12 1.27 m +0.08 ?0.07 +7 ?3 +0.08 ?0.07 0.78 max. 0.60.2 0.22 0.42 1.8 max. 1.550.05 5.60.2 7.70.3 1.1 110 11 20 0.10.1 12.70.3 s ? pd166105gs r07ds0604ej0100 rev.1.00 page 14 of 15 jan 19, 2012 taping information there are two types (e1, e2) of directio ns of the device in the career tape. pin 1 indication tape drawout direction e1: pin 1 of the device faces toward the open end of the tape, away from the reel e2: pin 1 of the device faces away from the open end of the tape, toward the reel pin 1 indication marking information this figure indicates the marking items and arrangement. ho wever, details of the letterform, the size and the position aren't indicated. japan d166105gs lead-free mark part no. lot number pin 1 indication ? pd166105gs r07ds0604ej0100 rev.1.00 page 15 of 15 jan 19, 2012 recommended soldering conditions the ? pd166105 should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact a renesas electronics sales representative. for technical information, see the following website. semiconductor package mount manual ( http://www.renesas.com/prod/package/manual/ ) ? ? pd166105gs-e1-ay: 20-pin plastic sop (7.62 mm (300)) ? ? pd166105gs-e2-ay: 20-pin plastic sop (7.62 mm (300)) soldering method soldering conditions symbol infrared reflow peak package's surface temperature: 260c, reflow time: 60 seconds or less (220c or higher), maximum allowable num ber of reflow processes: 3, exposure limit note : 7 days (10 to 72 hours pre-backing is required at 125c afterwards), flux: rosin flux with low chlorine (0.2 wt% or below) recommended. all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ? pd166105gs data sheet description rev. date page summary 1.00 jan 19, 2012 ? first edition issued notice 1. all information included in this document is current as of the date this document is issued. such information, however, is s ubject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose rela ting to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", an d "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics produ ct before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. fu rther, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended wh ere you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electroni cs data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. 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(note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2012 renesas electronics corporation. all rights reserved. colophon 1.1 |
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